Unipolar devices (e.g., MOSFET, Schottky diode) conduct via majority carriers only, leading to a positive temperature coefficient of resistance. Bipolar devices (e.g., BJT, IGBT, p-i-n diode) inject minority carriers into the drift region during forward conduction. This creates a plasma of electrons and holes, dramatically reducing the on-resistance (the conductivity modulation effect). The penalty is stored charge, causing a reverse recovery current during switching.
Reliability in power electronics is distinct from standard microelectronics due to high electric fields, high current densities, and significant self-heating. Unipolar devices (e
This breakdown is designed to serve as a foundation for a textbook chapter, a technical white paper, or an advanced study guide. Unipolar devices (e.g.
Power devices are characterized by static and dynamic parameters. high current densities